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V680S Series D1KP58HTN RF Tag (1K-byte Memory With High-temperature Capability) V680-D1KP58HTN
V680-D1KP58HTNMemory capacity1,000 bytes (user area)Memory typeEEPROMData Retention 10 years after writing (85 °C or less), 0.5 year after writing (85 °C to 125 °C) Total data retention at high temperatures exceeding 125 °C is 10 hours *1Write Endura...
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V680-D1KP58HTN |
|
Memory capacity |
1,000 bytes (user area) |
Memory type |
EEPROM |
Data Retention |
10 years after writing (85 °C or less), 0.5 year after writing (85 °C to 125 °C) Total data retention at high temperatures exceeding 125 °C is 10 hours *1 |
Write Endurance |
100,000 writes for each block (25 °C) |
Ambient operating temperature (during transmission) |
−25 to 85 °C (with no icing) |
Ambient storage temperature (during data backup) |
−40 to 250 °C (with no icing) *2 (Data retention: −40 to 125 °C) 1. 2,000 cycles of 30 minutes each between room temperature and 200 °C 2. 500 hours at 250 °C |
Ambient storage humidity |
No restrictions |
Degree of protection |
IP67 (IEC 60529:2001) Oil resistance equivalent to IP67G (JIS C 0920:2003, Appendix 1) |
Vibration resistance |
No abnormality after application of 10 to 2,000 Hz, 1.5-mm double amplitude, acceleration: 150 m/s2, 10 sweeps each in X, Y, and Z directions for 15 minutes each |
Shock resistance |
No abnormality after application of 500 m/s2, 3 times each in X, Y, and Z directions (Total: 18 times) |
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